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| Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1492 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 (TC=25C) Ratings 130 110 5 10 6 70 3.5 150 -55 to +150 Unit V V V A 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 130V, IE = 0 VCE = 110V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 5A IC = 5A, IB = 5mA IC = 5A, IB = 5mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 5A, IB1 = 5mA, IB2 = -5mA, VCC = 50V 20 1.4 4.5 0.8 110 2000 5000 30000 2.5 3.0 V V MHz s s s min typ max 100 100 100 Unit A A A V FE2 Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 2.0 1.5 Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 26.00.5 10.0 2.0 4.0 3.0 1 Power Transistors PC -- Ta 80 2SD2254 IC -- VCE 12 TC=25C 10 IB=5mA 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Collector power dissipation PC (W) 70 60 50 40 30 20 10 (1) Collector current IC (A) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) 30 8 6 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 10 3 TC=-25C 1 100C 0.3 25C 4 0.4mA 0.3mA (2) 2 (3) 0 0 20 40 60 80 100 12 140 160 0 0 2 4 6 8 0.2mA 0.1mA 10 12 0.1 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 100000 hFE -- IC 1000 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 30000 30 300 10000 10 100 3000 TC=100C 1000 300 100 30 10 0.01 0.03 25C -25C 3 30 1 -25C TC=100C 0.3 25C 10 3 0.1 0.1 1 0.1 0.3 1 3 10 1 3 10 30 100 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=-IB2) VCC=50V TC=25C tstg 3 ton 1 0.3 0.1 0.03 0.01 0 4 8 12 16 tf Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C ICP 10ms IC DC Switching time ton,tstg,tf (s) Collector current IC (A) 10 10 3 1 0.3 0.1 0.03 0.01 1 t=1ms 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 1000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1) 2SD2254 Thermal resistance Rth(t) (C/W) 10 (2) 1 0.1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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